Aluminum nitride was first synthesized in 1877. By the 1980s, aluminum nitride was a ceramic insulator (polycrystalline material 70-210 W‧m−1‧K−1, while single crystals could be as high as 275 W‧m−1‧K−1) Aluminum has a high heat transfer capacity, so that aluminum nitride is widely used in microelectronics. Unlike yttrium oxide, aluminum nitride is non-toxic. Aluminum nitride is treated with metal and can replace alumina and tantalum oxide for a large number of electronic instruments. Aluminum nitride can be prepared by reduction of aluminum oxide and carbon or direct nitridation of aluminum metal. Aluminum nitride is a substance that is covalently bonded and has a hexagonal crystal structure and is shaped like zinc sulfide and wurtzite. The space group for this structure is P63mc. Industrial grade materials can be produced by hot pressing and welding. The substance is very stable in an inert high temperature environment.
In air, when the temperature is higher than 700 ° C, oxidation occurs on the surface of the material. At room temperature, an oxide film of 5-10 nm thick can still be detected on the surface of the material. Up to 1370 ° C, the oxide film still protects the material. However, when the temperature is higher than 1370 ° C, a large amount of oxidation occurs. Up to 980 ° C, aluminum nitride is still quite stable in hydrogen and carbon dioxide. Mineral acid dissolves slowly by attacking the boundaries of the granular material, while the strong base dissolves it by attacking the granular aluminum nitride. The substance will slowly hydrolyze in the water. Aluminum nitride is resistant to attack by most of the melted salts, including chlorides and cryolite (ie sodium hexafluoroaluminate).
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