(1) high thermal conductivity (about 320W / m · K), close to BeO and SiC, more than 5 times that of Al2O3;
(2) The coefficient of thermal expansion (4.5 × 10 -6 ° C) is matched with Si (3.5 ~ 4 × 10 -6 ° C) and GaAs (6 × 10 -6 ° C);
(3) excellent electrical properties (dielectric constant, dielectric loss, volume resistivity, dielectric strength);
(4) good mechanical properties, higher flexural strength than Al2O3 and BeO ceramics, can be sintered at normal pressure;
(5) high purity;
(6) good optical transmission characteristics;
(7) non-toxic;
(8) It can be produced by a casting process. It is a promising high-power integrated circuit substrate and packaging material.
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